CATHODOLUMINESCENCE OF SILICON-CARBIDE CONTAINING IMPLANTED NITROGEN AND OXYGEN IONS

被引：0
|
作者：
KODRAU, NV [1 ]
MAKAROV, VV [1 ]
机构：
[1] MI KALININ POLYTECH INST,LENINGRAD,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1977年 / 11卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：569 / 570
页数：2
相关论文
共 50 条
  • [21] DETERMINATION OF OXYGEN IN SILICON-CARBIDE BY A SPECTROGRAPHIC METHOD
    KRAVCHEN.LF
    KUROCHKI.VD
    ZHURNAL ANALITICHESKOI KHIMII, 1972, 27 (02): : 398 - +
  • [22] INFLUENCE OF OXYGEN ON THE FORMATION OF ALUMINUM SILICON-CARBIDE
    OSCROFT, RJ
    THOMPSON, DP
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (01) : 224 - 226
  • [23] CATHODOLUMINESCENCE OF SILICON CARBIDE DOPED WITH BORON AND NITROGEN.
    Andreev, A.P.
    Violin, E.E.
    Tairov, Yu.M.
    Fayans, O.A.
    1973, 7 (02): : 208 - 210
  • [24] LUMINESCENCE SPECTRA OF DEFECTS IN ION-IMPLANTED SILICON-CARBIDE
    KODRAU, NV
    MAKAROV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 813 - 814
  • [25] DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED SILICON-CARBIDE
    HEFT, A
    WENDLER, E
    BACHMAN, T
    GLASER, E
    WESCH, W
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 142 - 146
  • [26] Range distributions of implanted ions in silicon carbide
    Janson, MS
    Linnarsson, MK
    Hallén, A
    Svensson, BG
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 779 - 782
  • [27] SILICON-CARBIDE
    AULT, NN
    CROWE, JT
    AMERICAN CERAMIC SOCIETY BULLETIN, 1994, 73 (06): : 125 - 127
  • [28] SILICON-CARBIDE
    AULT, NN
    CROWE, JT
    AMERICAN CERAMIC SOCIETY BULLETIN, 1989, 68 (05): : 1062 - 1063
  • [29] SILICON-CARBIDE
    不详
    ENGINEERING MATERIALS AND DESIGN, 1977, 21 (08): : 24 - 25
  • [30] SILICON-CARBIDE
    AULT, NN
    CROWE, JT
    AMERICAN CERAMIC SOCIETY BULLETIN, 1993, 72 (06): : 114 - &
12345