PHOTOLUMINESCENCE OF A ZNSE-ZNS STRAINED-LAYER SUPERLATTICE UNDER HIGH EXCITATIONS

被引：6

作者：

GUAN, ZP ^{[1
]}

FAN, XW ^{[1
]}

FAN, GH ^{[1
]}

XU, XR ^{[1
]}

机构：

[1] TIANJING INST TECHNOL,TIANJIN,PEOPLES R CHINA

来源：

JOURNAL OF LUMINESCENCE | 1990年 / 45卷 / 1-6期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/0022-2313(90)90152-2

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The luminescence spectra of high density excitons in a ZnSe-ZnS strained-layer superlattice (SLS) have been studied in the temperature range 77-250 K. The photoluminescence (PL) spectrum in the SLS usually has only one near edge emission band Es. The Es band is attributed to free exciton recombination following scattering from electrons in the conduction band. According to whether the binding energy of the free exciton increases as the well width of SLS decreases, it can be explained that why it is difficult to observe the separated P band in the ZnSe-ZnS SLS system. © 1990.

引用

页码：224 / 227

页数：4

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