MAGNETIC SURFACE ANISOTROPY AT THE IRON-SILICON INTERFACE

被引：7

作者：

FRAIT, Z ^{[1
]}

FRAITOVA, D ^{[1
]}

DUFOUR, C ^{[1
]}

MANGIN, P ^{[1
]}

MARCHAL, G ^{[1
]}

机构：

[1] UNIV NANCY 1, PHYS SOLIDE LAB, CNRS, URA 155, F-54506 VANDOEUVRE NANCY, FRANCE

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1994年 / 30卷 / 02期

关键词：

D O I：

10.1109/20.312384

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results of measurements of the surface magnetic energy at the iron-silicon interface by means of the standing spin-wave resonance experiments, performed at RT. and at frequencies of 17 and 25 GHz, are reported. The samples in the form of thin polycrystalline iron films (10 to 220 nm thick) sandwiched between silicon layers (7.5 nm thick) were prepared by evaporation in UHV. The surface magnetic energy was found of the easy plane type (negative surface anisotropy) with values in the range -0.4 to -1.8 erg/cm2, its origin is discussed. The theoretical methods used for the evaluation of the experiment are commented, the penetration depth of the spin-wave surface mode is evaluated.

引用

页码：711 / 713

页数：3

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