A COMPARISON OF ALANE PRECURSORS FOR GROWTH OF ALAS AND ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引:6
|
作者
ABERNATHY, CR [1 ]
WISK, PW [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1016/0038-1101(94)00188-L
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:737 / 738
页数:2
相关论文
共 50 条
  • [1] Comparison of alane precursors for growth of AlAs and AlGaAs by metalorganic molecular beam epitaxy
    Univ of Florida, Gainesville, United States
    Solid State Electron, 3 (737-738):
  • [2] GROWTH OF HIGH-QUALITY ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIMETHYLAMINE ALANE
    ABERNATHY, CR
    JORDAN, AS
    PEARTON, SJ
    HOBSON, WS
    BOHLING, DA
    MUHR, GT
    APPLIED PHYSICS LETTERS, 1990, 56 (26) : 2654 - 2656
  • [3] THE GROWTH OF HIGH-QUALITY ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY
    HERSEE, SD
    MARTIN, PA
    CHIN, A
    BALLINGALL, JM
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (02) : 973 - 976
  • [4] APPLICATIONS OF SPECTROELLIPSOMETRY TO THE GROWTH OF GAAS AND ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY
    QUINN, WE
    ASPNES, DE
    GREGORY, S
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 1045 - 1046
  • [5] METALORGANIC MOLECULAR-BEAM EPITAXY OF ALGAAS USING APAH
    KONIG, F
    MORSCH, G
    KAMP, M
    LUTH, H
    HOSTALEK, M
    POHL, L
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (10): : 4425 - 4429
  • [6] COMPARISON OF TRIETHYLGALLIUM AND TRI-ISOBUTYLGALLIUM FOR GROWTH OF GAAS AND ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY
    ABERNATHY, CR
    WISK, PW
    JONES, AC
    RUSHWORTH, SA
    APPLIED PHYSICS LETTERS, 1992, 61 (02) : 180 - 182
  • [7] GROWTH OF AIN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    MACKENZIE, JD
    ABERNATHY, CR
    PEARTON, SJ
    KRISHNAMOORTHY, V
    BHARATAN, S
    JONES, KS
    WILSON, RG
    APPLIED PHYSICS LETTERS, 1995, 67 (02) : 253 - 255
  • [8] GROWTH OF GAAS AND ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIS-DIMETHYLAMINOARSENIC
    ABERNATHY, CR
    WISK, PW
    BOHLING, DA
    MUHR, GT
    APPLIED PHYSICS LETTERS, 1992, 60 (19) : 2421 - 2423
  • [9] MONOLAYER RESOLVED MONITORING OF ALAS GROWTH WITH METALORGANIC MOLECULAR-BEAM EPITAXY BY REFLECTANCE ANISOTROPY SPECTROSCOPY
    RUMBERG, J
    REINHARDT, F
    RICHTER, W
    FARRELL, T
    ARMSTRONG, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (01): : 88 - 91
  • [10] STUDY OF MECHANISM TO CONTROL ELECTRICAL-PROPERTIES OF ALAS GROWN USING AMINE-ALANE WITH METALORGANIC MOLECULAR-BEAM EPITAXY
    MIYAKOSHI, K
    SUEMUNE, I
    APPLIED PHYSICS LETTERS, 1994, 64 (12) : 1549 - 1551