Excess Heat in Ni-H Systems and Selective Resonant Tunneling

被引:0
|
作者
Li, Xing Z. [1 ]
Dong, Zhan M. [1 ]
Liang, Chang L. [1 ]
机构
[1] Tsinghua Univ, Dept Phys, Beijing, Peoples R China
关键词
Bethe's solar model of weak interaction; Internal conversion electron; Resonant electron capture; Selective resonant tunneling;
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Selective resonant tunneling model is applied to Ni-H systems to explain the "excess heat" without strong neutron and gamma radiations. In combination with Bethe's solar model of weak interaction, the reaction rate is estimated, and compared with experiments. An experimental test is further suggested. (C) 2014 ISCMNS. All rights reserved.
引用
收藏
页码:299 / 310
页数:12
相关论文
共 50 条
  • [31] ELECTROCHEMICAL FORMATION AND DISINTEGRATION OF THE NI-H PHASE IN BRIGHT NICKEL COATINGS
    RASHKOV, S
    MONEV, M
    TOMOV, I
    SURFACE TECHNOLOGY, 1982, 16 (03): : 203 - 208
  • [32] Modeling of Phase Equilibria in Ni-H: Bridging the Atomistic with the Continuum Scale
    Korbmacher, Dominique
    von Pezold, Johann
    Brinckmann, Steffen
    Neugebauer, Joerg
    Hueter, Claas
    Spatschek, Robert
    METALS, 2018, 8 (04):
  • [33] Ti-H and Ni-H interactions in Si: first-principles theory
    Backlund, D. J.
    Estreicher, S. K.
    DEFECTS IN INORGANIC PHOTOVOLTAIC MATERIALS, 2010, 1268 : 18 - 23
  • [34] ALKYLATION OF o-CRESOL BY METHANOL ON Ni-H MORDENITE.
    Akhmedov, V.M.
    Agaev, A.A.
    Mamedov, S.E.
    Mamedov, F.A.
    Journal of applied chemistry of the USSR, 1987, 60 (6 pt 2): : 1355 - 1357
  • [35] Structural, electrical, and vibrational properties of Ti-H and Ni-H complexes in Si
    Backlund, D. J.
    Estreicher, S. K.
    PHYSICAL REVIEW B, 2010, 82 (15)
  • [36] Resonant tunneling in natural photosynthetic systems
    Gerodias, Kit M.
    Bernido, Maria Victoria Carpio
    Bernido, Christopher C.
    PHYSICA SCRIPTA, 2021, 96 (12)
  • [37] Patterns in bistable resonant tunneling systems
    Kochelap, VA
    Glavin, BA
    Mitin, VV
    HOT CARRIERS IN SEMICONDUCTORS, 1996, : 551 - 553
  • [38] RESONANT TUNNELING IN 0 - D SYSTEMS
    RAMDANE, A
    FAINI, G
    LAUNOIS, H
    ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1991, 85 (03): : 389 - 393
  • [39] DISLOCATION RELAXATION PEAKS INVOLVING HYDROGEN DRAG IN DEFORMED NI-H ALLOYS
    TANAKA, K
    INUKAI, T
    UCHIDA, K
    YAMADA, M
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6890 - 6896