FREQUENCY-LOCKING OF A 1.5-MU-M DFB LASER TO AN ATOMIC KRYPTON LINE USING OPTOGALVANIC EFFECT

被引：50
|
作者：
CHUNG, YC [1 ]
ROXLO, CB [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 16期
关键词：
D O I：
10.1049/el:19880713
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1048 / 1049
页数：2
相关论文
共 50 条
  • [41] NEW LAMBDA/4 PHASE-SHIFT METHOD BY CONVERSION OF REFRACTIVE-INDEX DIFFERENCE AND APPLICATION FOR 1.5-MU-M GAINASP-INP DFB LASER
    SHIM, JI
    LEE, KS
    ARAI, S
    SUEMATSU, Y
    KOMORI, K
    ELECTRONICS LETTERS, 1989, 25 (24) : 1654 - 1656
  • [42] GENERATION OF HIGH-POWER FEMTOSECOND PULSES NEAR 1.5-MU-M USING A COLOR-CENTER LASER SYSTEM
    SUCHA, G
    BOLTON, SR
    CHEMLA, DS
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) : 2163 - 2175
  • [43] EXTREMELY LOW THRESHOLD CURRENT OPERATION IN 1.5-MU-M MQW-DFB LASER-DIODES WITH SEMI-INSULATING INP CURRENT BLOCKING REGION
    SASAKI, T
    YAMAZAKI, H
    HENMI, N
    YAMADA, H
    YAMAGUCHI, M
    KITAMURA, M
    MITO, I
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1990, 8 (09) : 1343 - 1349
  • [44] OVER 720 GHZ (5.8NM) FREQUENCY TUNING BY A 1.5-MU-M DBR LASER WITH PHASE AND BRAGG WAVELENGTH CONTROL REGIONS
    MURATA, S
    MITO, I
    KOBAYASHI, K
    ELECTRONICS LETTERS, 1987, 23 (08) : 403 - 405
  • [45] PERFORMANCE-CHARACTERISTICS OF A 1.5-MU-M SINGLE-FREQUENCY SEMICONDUCTOR-LASER WITH AN EXTERNAL WAVE-GUIDE BRAGG REFLECTOR
    OLSSON, NA
    HENRY, CH
    KAZARINOV, RF
    LEE, HJ
    ORLOWSKY, KJ
    JOHNSON, BH
    SCOTTI, RE
    ACKERMAN, DA
    ANTHONY, PJ
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (02) : 143 - 147
  • [46] FREQUENCY-STABILIZED DFB LASER MODULE USING 1.53159 MU-M ABSORPTION-LINE OF C2H2
    SUDO, S
    SAKAI, Y
    YASAKA, H
    IKEGAMI, T
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1989, 1 (10) : 281 - 284
  • [47] PERFORMANCE OF 1.5-MU-M LAMBDA-4-SHIFTED DFB-SIPBH LASER-DIODES WITH ELECTRON-BEAM DEFINED AND REACTIVE ION-ETCHED GRATINGS
    ZAH, CE
    CANEAU, C
    MENOCAL, SG
    GOZDZ, AS
    LIN, PSD
    FAVIRE, F
    YIYAN, A
    LEE, TP
    DENTAI, AG
    JOYNER, CH
    ELECTRONICS LETTERS, 1989, 25 (10) : 650 - 652
  • [48] OPTICAL FREQUENCY-MEASUREMENT OF THE (HCN)-C-12-N-14 LAMB-DIP-STABILIZED 1.5-MU-M DIODE-LASER
    AWAJI, Y
    NAKAGAWA, K
    DELABACHELERIE, M
    SASADA, H
    OPTICS LETTERS, 1995, 20 (19) : 2024 - 2026
  • [49] 20 GHZ BANDWIDTH 1.5-MU-M WAVELENGTH VUG DFB LASER USING A ZERO NET STRAIN INXGA1-XASYP1-Y WELL ACTIVE STRUCTURE GROWN AT CONSTANT-Y
    KAZMIERSKI, C
    OUGAZZADEN, A
    ROBEIN, D
    MATHOORASING, D
    BLEZ, M
    MIRCEA, A
    ELECTRONICS LETTERS, 1993, 29 (14) : 1290 - 1291
  • [50] SIGNAL GAIN SATURATION IN 2-CHANNEL COMMON AMPLIFICATION USING A 1.5-MU-M INGAASP TRAVELING-WAVE LASER-AMPLIFIER
    MUKAI, T
    INOUE, K
    SAITOH, T
    ELECTRONICS LETTERS, 1987, 23 (08) : 396 - 397
12345