RAMAN-SCATTERING AS AN ANALYTICAL TOOL FOR HIGH-TC SUPERCONDUCTORS

被引：8
|
作者：
THOMSEN, C
CARDONA, M
LIU, R
机构：
[1] Max-Planck-Inst fuer, Festkoerperforschung, Germany
来源：
JOURNAL OF THE LESS-COMMON METALS | 1989年 / 150卷 / 1-2期
关键词：
Ceramic Materials--Spectroscopic Analysis - Copper Oxide--Spectroscopic Analysis - Crystals--Orientation - Spectroscopy; Raman--Applications - Yttrium Compounds--Spectroscopic Analysis;
D O I：
10.1016/0022-5088(89)90253-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Raman scattering can be employed in the characterization of high Tc superconductors. It may be routinely used to identify foreign phases, oxygen content or impurities with high lateral resolution. In connection with silicon-based devices this may be a useful application. When thin films are used, the orientation of the films may easily be determined; this is an important aspect in view of the potential applications of the strong anisotropy in the optical and electrical properties of the high Tc superconductors.
引用
收藏
页码：33 / 37
页数：5
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