PHOTOEMISSION STUDIES OF GE(111)-NA SURFACE

被引：0
|
作者：
RIACH, GE
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1969年 / 6卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：916 / &
相关论文
共 50 条
  • [21] Photoemission studies of ZnSe epilayers grown on GaAs(111)B surface
    Feng, PX
    Leckey, RCG
    Riley, JD
    Brack, N
    Pigram, PJ
    Hollering, M
    Ley, L
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) : 710 - 717
  • [22] Core level photoemission studies of the sulphur terminated Ge(100) surface
    Roche, J
    Ryan, P
    Hughes, GJ
    APPLIED SURFACE SCIENCE, 2001, 174 (3-4) : 271 - 274
  • [23] The Fermi surface of Sn/Ge(111) and Pb/Ge(111)
    Tejeda, A.
    Cortés, R.
    Lobo, J.
    Michel, E. G.
    Mascaraque, A.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (35)
  • [24] Experimental studies of an In/Pb binary surface alloy on Ge(111)
    Sohail, Hafiz M.
    Uhrberg, R. I. G.
    SURFACE SCIENCE, 2016, 649 : 146 - 151
  • [25] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110)
    EASTMAN, DE
    FREEOUF, JL
    PHYSICAL REVIEW LETTERS, 1974, 33 (27) : 1601 - 1605
  • [26] CHEMISORPTION OF ALKALI-METALS (NA, K, CS) ON GE(111) SURFACE
    SOUKIASSIAN, P
    KENDELEWICZ, T
    KIM, ST
    PAPAGEORGOPOULOS, CA
    KAPOOR, S
    BAROS, Y
    HURYCH, ZD
    VACUUM, 1990, 41 (1-3) : 571 - 574
  • [27] Surface electronic properties of Na/Ge(111)-3x1
    Kim, JW
    Seo, JM
    Kim, S
    SURFACE SCIENCE, 1996, 351 (1-3) : L239 - L244
  • [28] CHEMISORPTION SIZE EFFECTS - ANISOTROPIC PHOTOEMISSION FROM GE(111)H, GE(111)CL, SI(111)H AND SI(111)CL
    ROWE, JE
    CHRISTMAN, SB
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (07): : 853 - 853
  • [29] ELECTRONIC STRUCTURE OF GE - PHOTOEMISSION STUDIES
    DONOVAN, TM
    SPICER, WE
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (03): : 478 - &
  • [30] ELECTRONIC-STRUCTURE OF GE(111) AND GE(111)-H FROM ANGLE-RESOLVED PHOTOEMISSION MEASUREMENTS
    BRINGANS, RD
    HOCHST, H
    PHYSICAL REVIEW B, 1982, 25 (02): : 1081 - 1089
12345