NUMERICAL SIMULATIONS OF INDUCTIVE-HEATED FLOAT-ZONE GROWTH

被引:8
|
作者
CHAN, YT
CHOI, SK
机构
[1] Scientific Research Associates, Inc., Glastonbury
关键词
D O I
10.1063/1.352294
中图分类号
O59 [应用物理学];
学科分类号
摘要
The present work provides an improved fluid flow and heat-transfer modeling of float-zone growth by introducing a rf heating model so that an ad hoc heating temperature profile is not necessary. Numerical simulations were carried out to study the high-temperature float-zone growth of titanium carbide single crystal. The numerical results showed that the thermocapillary convection occurring inside the molten zone tends to increase the convexity of the melt-crystal interface and decrease the maximum temperature of the molten zone, while the natural convection tends to reduce the stability of the molten zone by increasing its height. It was found that the increase of induced heating due to the increase of applied rf voltage is reduced by the decrease of zone diameter. Surface tension plays an important role in controlling the amount of induced heating. Finally, a comparison of the computed shape of the free surface with a digital image obtained during a growth run showed adequate agreement.
引用
收藏
页码:3741 / 3749
页数:9
相关论文
共 50 条
  • [41] High-gain bipolar detector on float-zone silicon
    Han, DJ
    Batignani, G
    Del Guerra, A
    Dalla Betta, GF
    Boscardin, M
    Bosisio, L
    Giorgi, M
    Forti, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 512 (03): : 572 - 577
  • [42] Growth rate dependence of the NdFeO3 single crystal grown by float-zone technique
    Wang, Yabin
    Cao, Shixun
    Shao, Mingjie
    Yuan, Shujuan
    Kang, Baojuan
    Zhang, Jincang
    Wu, Anhua
    Xu, Jun
    JOURNAL OF CRYSTAL GROWTH, 2011, 318 (01) : 927 - 931
  • [43] Solutocapillary convection in the float-zone process with a strong magnetic field
    Walker, JS
    Dold, P
    Cröll, A
    Volz, MP
    Szofran, FR
    INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2002, 45 (23) : 4695 - 4702
  • [44] Supergain transistors on high-purity float-zone silicon substrate
    Han, DJ
    Batignani, G
    Guerra, AD
    APPLIED PHYSICS LETTERS, 2003, 83 (07) : 1450 - 1452
  • [45] AI2O3 SINGLE CRYSTAL GROWTH BY ELECTRON BEAM FLOAT-ZONE MELTING
    CLASS, W
    NESOR, HR
    VACUUM, 1966, 16 (06) : 315 - &
  • [46] The influence of growth rate on the microstructural and magnetic properties of float-zone grown ErFeO3 crystals
    Koohpayeh, S. M.
    Abell, J. S.
    Bamzai, K. K.
    Bevan, A. I.
    Fort, D.
    Williams, A. J.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 309 (01) : 119 - 125
  • [47] LINEAR-STABILITY THEORY OF THERMOCAPILLARY CONVECTION IN A MODEL OF THE FLOAT-ZONE CRYSTAL-GROWTH PROCESS
    NEITZEL, GP
    CHANG, KT
    JANKOWSKI, DF
    MITTELMANN, HD
    PHYSICS OF FLUIDS A-FLUID DYNAMICS, 1993, 5 (01): : 108 - 114
  • [48] Identification of hydrogen related defects in proton implanted float-zone silicon
    Lévêque, P
    Hallén, A
    Svensson, BG
    Wong-Leung, J
    Jagadish, C
    Privitera, V
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2003, 23 (01): : 5 - 9
  • [49] PHOSPHORUS DOPING OF FLOAT-ZONE SILICON BY THERMAL-NEUTRON IRRADIATION
    BURN, RR
    COOK, GM
    JONES, JD
    BAKER, JA
    TRANSACTIONS OF THE AMERICAN NUCLEAR SOCIETY, 1977, 26 : 38 - 39
  • [50] ELECTRICAL-PROPERTIES OF DISLOCATIONS IN PLASTICALLY DEFORMED FLOAT-ZONE SILICON
    SIMON, JJ
    YAKIMOV, E
    PASQUINELLI, M
    JOURNAL DE PHYSIQUE III, 1995, 5 (09): : 1327 - 1336