共 50 条
- [41] TIGHT-BINDING TOTAL ENERGY MODELS FOR SILICON AND GERMANIUM PHYSICAL REVIEW B, 1993, 47 (15): : 9366 - 9376
- [42] Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bands EUROPEAN PHYSICAL JOURNAL B, 2013, 86 (04):
- [43] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM PHYSICAL REVIEW, 1969, 184 (03): : 713 - &
- [44] Defect evolution of low energy, amorphizing germanium implants in silicon 1600, American Institute of Physics Inc. (93):
- [45] BINDING ENERGY OF A CARRIER WITH A NEUTRAL IMPURITY ATOM IN GERMANIUM AND IN SILICON JETP LETTERS-USSR, 1971, 14 (05): : 185 - +
- [46] Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bands The European Physical Journal B, 2013, 86
- [47] THE ACTIVATION-ENERGY OF PHOSPHORUS DONORS IN SILICON-RICH SILICON GERMANIUM ALLOYS PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (01): : 275 - 282
- [48] Modeling Germanium-Silicon Interdiffusion in Silicon Germanium/Silicon Superlattice Structures NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, : 576 - +
- [50] Optoelectronics in silicon and germanium silicon GERMANIUM SILICON: PHYSICS AND MATERIALS, 1999, 56 : 347 - 386