LOW-FREQUENCY GAIN-ENHANCED CMOS OPERATIONAL-AMPLIFIER

被引:2
|
作者
AGGARWAL, S
BHATTACHARYYA, AB
机构
[1] Indian Inst of Technology, New Delhi
来源
关键词
AMPLIFIERS; INTEGRATED CIRCUITS; OPERATIONAL AMPLIFIERS; METAL-OXIDE-SEMICONDUCTOR DEVICES;
D O I
10.1049/ip-g-2.1991.0032
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To achieve a high gain in a CMOS operational amplifier is difficult because of the inherent low transconductance of MOS transistors. In the paper, a gain-enhanced CMOS operational amplifier that uses a modified differential input stage is presented. The proposed input stage is derived from a cascode differential amplifier and provides a gain improvement of 16 dB over that of the cascode stage. The CMOS differential amplifier has been prototyped on silicon with a 5-mu-m p-well CMOS technology. Measurements made on the test chip confirm the SPICE simulated results. Simulations of the operational amplifier show improvement with respect to the gain, bandwidth, PSRR at high frequencies and slew rate, rendering it suitable for low-frequency applications.
引用
收藏
页码:170 / 174
页数:5
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