DIRECT MAPPING OF THE COSI2/SI(111) INTERFACE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND MODULATION SPECTROSCOPY

被引：19
|
作者：
LEE, EY
SIRRINGHAUS, H
VONKANEL, H
机构：
[1] Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich
来源：
PHYSICAL REVIEW B | 1994年 / 50卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.50.14714
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
To map the interfacial structure of CoSi2/Si(111), the atomic thickness variations of epitaxial CoSi2 films were spatially resolved and determined using ballistic-electron-emission microscopy. Modulation spectroscopy was also used, and it showed not only thickness variations, but also strong lateral variations near the interfacial steps and dislocations. Also, a strong energy dependence of the quantum-size effects due to the transition from bound quantized subbands to resonances in CoSi2 was seen. © 1994 The American Physical Society.
引用
收藏
页码：14714 / 14717
页数：4
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