OPTIMIZATION OF LOW-PRESSURE SILICON-NITRIDE FILM GROWTH FROM DICHLOROSILANE AND AMMONIA IN INTEGRATED-CIRCUIT MANUFACTURE

被引：2
|
作者：
PEEV, G
ZAMBOV, L
机构：
[1] High Institute of Chemical Technology, Sofia, 1156
来源：
THIN SOLID FILMS | 1991年 / 203卷 / 01期
关键词：
D O I：
10.1016/0040-6090(91)90528-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An optimization criterion accounting for the energy and material consumption is defined. The allowed limits of the variations in the technological factors are discussed and the optimization criterion values within these limits are calculated. The analysis presented, demonstrating the significance of the chosen factors for the production cost-price, is of great practical importance.
引用
收藏
页码：185 / 193
页数：9
相关论文
共 50 条
  • [31] CHARACTERIZATION OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE USING EXPERIMENTAL-DESIGN
    GREGORY, JA
    YOUNG, DJ
    MOUNTAIN, RW
    DOHERTY, CL
    THIN SOLID FILMS, 1991, 206 (1-2) : 11 - 17
  • [32] DYNAMIC BEHAVIOR OF HYDROGEN IN SILICON-NITRIDE AND OXYNITRIDE FILMS MADE BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
    ARNOLDBIK, WM
    MAREE, CHM
    MAAS, AJH
    VANDENBOOGAARD, MJ
    HABRAKEN, FHPM
    KUIPER, AET
    PHYSICAL REVIEW B, 1993, 48 (08) : 5444 - 5456
  • [33] DEPOSITION MECHANISM OF SILICON-NITRIDE IN DIRECT PHOTOASSISTED CHEMICAL-VAPOR-DEPOSITION USING A LOW-PRESSURE HG LAMP
    YOSHIMOTO, M
    TAKUBO, K
    OHTSUKI, T
    KOMODA, M
    MATSUNAMI, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (06) : 1976 - 1982
  • [34] ULTRATHIN SILICON-NITRIDE FILMS PREPARED BY COMBINING RAPID THERMAL NITRIDATION WITH LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
    ANDO, K
    ISHITANI, A
    HAMANO, K
    APPLIED PHYSICS LETTERS, 1991, 59 (09) : 1081 - 1083
  • [35] STABILITY OF HYDROGEN IN SILICON-NITRIDE FILMS DEPOSITED BY LOW-PRESSURE AND PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION TECHNIQUES
    XIE, JZ
    MURARKA, SP
    GUO, XS
    LANFORD, WA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 150 - 152
  • [36] Growth of hexagonal boron nitride films on silicon substrates by low-pressure chemical vapor deposition
    Xi Chen
    Chunbo Tan
    Xiaohang Liu
    Kairan Luan
    Yufeng Guan
    Xiuhuan Liu
    Jihong Zhao
    Lixin Hou
    Yanjun Gao
    Zhanguo Chen
    Journal of Materials Science: Materials in Electronics, 2021, 32 : 3713 - 3719
  • [37] Growth of hexagonal boron nitride films on silicon substrates by low-pressure chemical vapor deposition
    Chen, Xi
    Tan, Chunbo
    Liu, Xiaohang
    Luan, Kairan
    Guan, Yufeng
    Liu, Xiuhuan
    Zhao, Jihong
    Hou, Lixin
    Gao, Yanjun
    Chen, Zhanguo
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021, 32 (03) : 3713 - 3719
  • [38] OXIDE FILM GROWTH ON GAAS AND SILICON SUBSTRATES BY ANODIZATION IN OXYGEN PLASMA AND ITS APPLICATION TO DEVICES AND INTEGRATED-CIRCUIT FABRICATION
    SUGANO, T
    THIN SOLID FILMS, 1980, 72 (01) : 9 - 17
  • [39] MATERIAL PROPERTIES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON-NITRIDE FOR MODELING AND CALIBRATING THE SIMULATION OF ADVANCED ISOLATION STRUCTURES
    SMEYS, PIL
    GRIFFIN, PB
    SARASWAT, KC
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) : 2837 - 2842
  • [40] SILICON-NITRIDE ELABORATED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION FROM SI2H6 AND NH3 AT LOW-TEMPERATURE
    SCHEID, E
    KOUASSI, LK
    HENDA, R
    SAMITIER, J
    MORANTE, JR
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 17 (1-3): : 185 - 189
12345