OPTIMIZATION OF LOW-PRESSURE SILICON-NITRIDE FILM GROWTH FROM DICHLOROSILANE AND AMMONIA IN INTEGRATED-CIRCUIT MANUFACTURE

被引:2
|
作者
PEEV, G
ZAMBOV, L
机构
[1] High Institute of Chemical Technology, Sofia, 1156
关键词
D O I
10.1016/0040-6090(91)90528-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An optimization criterion accounting for the energy and material consumption is defined. The allowed limits of the variations in the technological factors are discussed and the optimization criterion values within these limits are calculated. The analysis presented, demonstrating the significance of the chosen factors for the production cost-price, is of great practical importance.
引用
收藏
页码:185 / 193
页数:9
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