PHOTOOXIDATION OF GAAS AND INSITU ELECTRON-BEAM-INDUCED CHLORINE ETCHING

被引：7
|
作者：
AKITA, K
SUGIMOTO, Y
TANEYA, M
KAWANISHI, H
机构：
[1] Optoelectronics Technol. Res. Lab., Tsukuba
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 07期
关键词：
D O I：
10.1088/0268-1242/6/7/025
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The durability of GaAs oxide layers to chlorine gas exposure was compared for the cases of photo-oxidation and thermal oxidation at room temperature. The GaAs oxide layer formed by photo-oxidation was found to be more durable to chlorine gas exposure, hence a photo-oxidized GaAs layer is suited to use as an inorganic mask. The time required to locally remove the oxide layer by simultaneous irradiation with chlorine molecules and an electron beam (EB) for patterning depended on the conditions of formation of the oxide layer, and was inversely proportional to the EB current density for the fixed GaAs oxide layer. The etch rate of GaAs increased with increasing EB density under constant chlorine irradiation.
引用
收藏
页码：699 / 704
页数：6
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