The durability of GaAs oxide layers to chlorine gas exposure was compared for the cases of photo-oxidation and thermal oxidation at room temperature. The GaAs oxide layer formed by photo-oxidation was found to be more durable to chlorine gas exposure, hence a photo-oxidized GaAs layer is suited to use as an inorganic mask. The time required to locally remove the oxide layer by simultaneous irradiation with chlorine molecules and an electron beam (EB) for patterning depended on the conditions of formation of the oxide layer, and was inversely proportional to the EB current density for the fixed GaAs oxide layer. The etch rate of GaAs increased with increasing EB density under constant chlorine irradiation.
机构:
University of Tennessee, Department of Materials Science and Engineering, 434 Dougherty Engineering Building, Knoxville, TN 37996-2200, United StatesUniversity of Tennessee, Department of Materials Science and Engineering, 434 Dougherty Engineering Building, Knoxville, TN 37996-2200, United States
Randolph, S.J.
Fowlkes, J.D.
论文数: 0引用数: 0
h-index: 0
机构:
University of Tennessee, Department of Materials Science and Engineering, 434 Dougherty Engineering Building, Knoxville, TN 37996-2200, United StatesUniversity of Tennessee, Department of Materials Science and Engineering, 434 Dougherty Engineering Building, Knoxville, TN 37996-2200, United States
Fowlkes, J.D.
Rack, P.D.
论文数: 0引用数: 0
h-index: 0
机构:
University of Tennessee, Department of Materials Science and Engineering, 434 Dougherty Engineering Building, Knoxville, TN 37996-2200, United StatesUniversity of Tennessee, Department of Materials Science and Engineering, 434 Dougherty Engineering Building, Knoxville, TN 37996-2200, United States