PHOTOREFLECTANCE CHARACTERIZATION OF INALGAAS MOLECULAR-BEAM EPITAXY LAYERS AND QUANTUM-WELLS

被引：4
|
作者：
CACCIATORE, C [1 ]
CAMPI, D [1 ]
CORIASSO, C [1 ]
RIGO, C [1 ]
ALIBERT, C [1 ]
机构：
[1] UNIV SCI & TECH LANGUEDOC EM2,EQUIPE MICROOPTOELECTR MONTPELLIER,CNRS,UNITE 040392,F-34060 MONTPELLIER,FRANCE
来源：
THIN SOLID FILMS | 1991年 / 197卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(91)90214-I
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have measured the room temperature photoreflectance spectrum from molecular beam epitaxy InAlGaAs epilayers of different compositions, and a InGaAs(7.0 nm)/InAlAs(8.8 nm) multiple quantum well (MQW). The spectra have been fitted by a complex resonance line shape expression. A linear energy gap vs. composition relationship has been obtained for the epilayers. In addition to all the allowed transitions of the MQW, we have observed features from a symmetry-forbidden transition: there is good agreement between the experimentally determined energies of the various features and a theoretical calculation.
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页码：1 / 8
页数：8
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