ETCH STOP BARRIERS IN SILICON PRODUCED BY ION-IMPLANTATION OF ELECTRICALLY NONACTIVE SPECIES

Silicon layers implanted with silicon, germanium, and carbon ions at doses between 1E14 and 3E16 ions/cm2 and energies between 35 and 200 keV were tested as etch stop barriers in an ethylenediamine-pyrocatechol-water solution. The decrease in the etch stop effect with annealing temperature was measured. The results obtained indicate that the effectiveness of the etch stop is influenced by both the implantation damage and the chemical interaction between the implanted ions and the defective crystal.