MOLECULAR-DYNAMICS SIMULATIONS OF DISORDER FORMED IN SILICON AND GERMANIUM BY LOW-ENERGY ION IRRADIATION

被引：4
|
作者：
MAZZONE, AM
机构：
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1989年 / 60卷 / 04期
关键词：
D O I：
10.1080/09500838908206447
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：131 / 135
页数：5
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