LOW-THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM VPE

被引：39
|
作者：
HERSEE, S
BALDY, M
ASSENAT, P
DECREMOUX, B
DUCHEMIN, JP
机构：
来源：
ELECTRONICS LETTERS | 1982年 / 18卷 / 14期
关键词：
D O I：
10.1049/el:19820423
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：618 / 620
页数：3
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