CONDUCTIVITY CONTROL TRANSISTOR - NEW DEVICE WITH 3 TERMINALS

被引：0
|
作者：
CARUSO, A
SPIRITO, P
VITALE, G
机构：
来源：
ALTA FREQUENZA | 1979年 / 48卷 / 09期
关键词：
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
引用
收藏
页码：557 / 562
页数：6
相关论文
共 50 条
  • [11] MODULATING TRANSISTOR - A NEW CLASS OF SEMICONDUCTOR-DEVICE
    FURSIN, GI
    ELECTRONICS LETTERS, 1980, 16 (17) : 662 - 663
  • [12] MONOLITHIC OPTOELECTRONIC TRANSISTOR - A NEW SMART-PIXEL DEVICE
    AULL, BF
    NICHOLS, KB
    MAKI, PA
    PALMATEER, SC
    BROWN, ER
    LIND, TA
    APPLIED PHYSICS LETTERS, 1993, 63 (11) : 1555 - 1557
  • [13] DEVICE DRIVER FOR DISPLAY TERMINALS
    COUTANT, CA
    FRASER, CW
    SOFTWARE-PRACTICE & EXPERIENCE, 1980, 10 (03): : 183 - 187
  • [14] TOWARD STANDARDIZED VIDEO TERMINALS - ANSI X3.64 DEVICE CONTROL
    SIEGEL, ML
    BYTE, 1984, 9 (04): : 365 - &
  • [15] THE INSULATED GATE TRANSISTOR - A NEW 3-TERMINAL MOS-CONTROLLED BIPOLAR POWER DEVICE
    BALIGA, BJ
    ADLER, MS
    LOVE, RP
    GRAY, PV
    ZOMMER, ND
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) : 821 - 828
  • [16] A new lateral trench-gate conductivity modulated power transistor
    Cai, J
    Sin, JKO
    Mok, PKT
    Ng, WT
    Lai, PPT
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) : 1788 - 1793
  • [17] NEW METHOD FOR CONTROL OF LARGE TRANSISTOR SWITCH
    USYSHKIN, EI
    DANILIN, VA
    ELECTRICAL TECHNOLOGY, 1977, (04): : 20 - 24
  • [18] New lateral trench-gate conductivity modulated power transistor
    Hong Kong Univ of Science and, Technology, Hong Kong
    IEEE Trans. Electron Devices, 8 (1788-1793):
  • [19] NEW DEVICE FOR MEASURING THE CONDUCTIVITY OF SMALL QUANTITIES OF SALIVA
    VOSS, A
    KAISER, H
    JOURNAL OF DENTAL RESEARCH, 1995, 74 : 546 - 546
  • [20] A new dynamic-threshold SOI device having an embedded resistor and a merged body-bias-control transistor
    Horiuchi, M
    INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 419 - 422
12345