ELECTROLUMINESCENCE OF A-SIC-H MULTILAYER FILMS

被引：5
|
作者：
CHEN, GH
ZHANG, FQ
YAN, SG
机构：
[1] Department of Physics, Lanzhou University, Lanzhou
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1016/S0022-3093(05)80353-9
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Visible-light electroluminescence (EL) of a-SiC:H multilayer light emission diode (LED) has been investigated at the first time. The results show that, the EL intensity of the a-SiC:H LED with a a-SiC:H multilayer active i-layer (LEDM) is several times greater than that of conventional a-SiC:H LED with a single a-SiC:H i-layer (LEDS), and the threshold current is lower, the EL peak positions of LEDM are in the vicinity of 630 nm and 730 nm, the forward EL intensity is one order of magnitude greater than that of reverse. The dependence of the EL intensity on temperature are also investigated.
引用
收藏
页码：1263 / 1266
页数：4
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