GUNN OSCILLATIONS UP TO 20 GHZ OPTICALLY INDUCED IN GAAS/ALAS SUPERLATTICE

被引：41
|
作者：
LEPERSON, H [1 ]
MINOT, C [1 ]
BONI, L [1 ]
PALMIER, JF [1 ]
MOLLOT, F [1 ]
机构：
[1] CNRS,L2M,F-92225 BAGNEUX,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 19期
关键词：
D O I：
10.1063/1.106984
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Direct observation of Gunn oscillations up to 20 GHz, induced by picosecond light pulses in an undoped GaAs/AlAs superlattice, is reported. They are obtained in the superlattice growth direction and from 7 K up to room temperature. The frequency is strongly dependent on the applied bias voltage and on the photoexcited carrier density. The oscillation frequency and the mode of operation are modeled by a classical numerical simulation.
引用
收藏
页码：2397 / 2399
页数：3
相关论文
共 41 条
  • [31] Direct growth of lattice mismatched InP on GaAs substrate with AlAs/GaAs superlattice-induced lateral quasi-quantum-wire buffer
    Park, Kwangwook
    Park, Gyeong Cheol
    Hwang, Juchan
    Min, Jungwook
    Kim, Young-Ill
    Kang, Chul
    Ooi, Boon S.
    Yim, Sang-Youp
    Kim, Jongmin
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 172
  • [32] Exciton resonance induced quenching of photocurrent in narrow miniband GaAs/AlAs superlattice p-i-n diodes
    Kawasaki, K
    Imazawa, M
    Kawashima, K
    Fujiwara, K
    Tominaga, K
    Hosoda, M
    COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 367 - 372
  • [33] PRESSURE-INDUCED GAMMA-X ELECTRON-TRANSFER RATES IN A (GAAS)15/(ALAS)5 SUPERLATTICE
    NUNNENKAMP, J
    REIMANN, K
    KUHL, J
    PLOOG, K
    PHYSICAL REVIEW B, 1991, 44 (15): : 8129 - 8137
  • [34] Quasi-phase-matched second-harmonic generation in a GaAs/AlAs superlattice waveguide by ion-implantation-induced intermixing
    Zeaiter, K
    Hutchings, DC
    Gwilliam, RM
    Moutzouris, K
    Rao, SV
    Ebrahimzadeh, M
    OPTICS LETTERS, 2003, 28 (11) : 911 - 913
  • [35] Quasi-phase-matched second harmonic generation in an GaAs/AlAs superlattice waveguide using ion-implantion induced intermixing
    Zeaiter, K
    Hutchings, DC
    Moutzouris, K
    Rao, SV
    Ebrahimzadeh, M
    2002 IEEE/LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2002, : 81 - 82
  • [36] FAST OPTICALLY INDUCED SWITCHING IN A BISTABLE TRIPLE-BARRIER ALAS/GAAS RESONANT-TUNNELING LIGHT-EMITTING DIODE
    YAN, ZC
    GOOVAERTS, E
    VANHOOF, C
    BORGHS, G
    SUPERLATTICES AND MICROSTRUCTURES, 1994, 16 (03) : 239 - 242
  • [37] DYNAMIC ASPECTS OF PRESSURE-INDUCED GAMMA-X ELECTRON-TRANSFER IN A (GAAS)15/(ALAS)5 TYPE-I SUPERLATTICE
    NUNNENKAMP, J
    REIMANN, K
    KUHL, J
    PLOOG, K
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (126): : 371 - 374
  • [38] Exciton resonance induced dips in photocurrent spectra of weakly coupled GaAs/AlAs superlattice p-i-n diodes: barrier thickness dependence
    Kawasaki, K
    Imazawa, M
    Kawashima, K
    Fujiwara, K
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 1999, 5 (1-2): : 117 - 123
  • [39] Oscillator-strength modification of Stark ladder transitions due to resonance-induced wavefunction delocalization in a GaAs/AlAs superlattice under the electric field
    Nogami, T
    Takeda, T
    Fujiwara, K
    PHYSICA E, 2001, 9 (02): : 236 - 242
  • [40] Persistence of trions and quenching of excitons in optically induced two-dimensional electron gases in mixed-type GaAs/AlAs quantum wells
    Baldwin, Thomas K.
    Phelps, Carey
    Wang, Hailin
    Prineas, John P.
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2014, 31 (12) : 3138 - 3143
12345