MEDIUM-ENERGY ION-SCATTERING INVESTIGATION OF HOMOEPITAXY ON H-TERMINATED SI(111)

被引：8
|
作者：
COPEL, M
TROMP, RM
机构：
[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
来源：
SURFACE SCIENCE | 1995年 / 337卷 / 1-2期
关键词：
CRYSTALLINE-AMORPHOUS INTERFACES; EPITAXY; HYDROGEN; MEDIUM ENERGY ION SCATTERING (MEIS); SILICON;
D O I：
10.1016/0039-6028(95)80035-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have investigated homoepitaxy on H terminated unreconstructed Si(111) at low temperatures. Epitaxy on the (1 x 1) surface requires growth temperatures about 80 degrees C higher than on the bare surface to achieve similar crystal quality. Even at higher temperatures (300 degrees C to 400 degrees C), where excellent growth is expected, we observe a degradation in the surface ordering on the H terminated surface, not observed for growth on the bare surface.
引用
收藏
页码：L773 / L776
页数：4
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