MEDIUM-ENERGY ION-SCATTERING INVESTIGATION OF HOMOEPITAXY ON H-TERMINATED SI(111)

被引：8
|
作者：
COPEL, M
TROMP, RM
机构：
[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
来源：
SURFACE SCIENCE | 1995年 / 337卷 / 1-2期
关键词：
CRYSTALLINE-AMORPHOUS INTERFACES; EPITAXY; HYDROGEN; MEDIUM ENERGY ION SCATTERING (MEIS); SILICON;
D O I：
10.1016/0039-6028(95)80035-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have investigated homoepitaxy on H terminated unreconstructed Si(111) at low temperatures. Epitaxy on the (1 x 1) surface requires growth temperatures about 80 degrees C higher than on the bare surface to achieve similar crystal quality. Even at higher temperatures (300 degrees C to 400 degrees C), where excellent growth is expected, we observe a degradation in the surface ordering on the H terminated surface, not observed for growth on the bare surface.
引用
收藏
页码：L773 / L776
页数：4
相关论文
共 50 条
  • [1] MEDIUM-ENERGY ION-SCATTERING AND STM STUDIES ON CU/SI(111)
    KOSHIKAWA, T
    YASUE, T
    TANAKA, H
    SUMITA, I
    KIDO, Y
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 99 (1-4): : 495 - 498
  • [2] STRUCTURE-ANALYSIS OF THE HF-TREATED SI(111)H SURFACE WITH MEDIUM-ENERGY ION-SCATTERING
    NISHIYAMA, A
    TERHORST, G
    LOHMEIER, M
    MOLENBROEK, AM
    FRENKEN, JWM
    SURFACE SCIENCE, 1994, 321 (03) : 261 - 266
  • [3] MEDIUM-ENERGY ION-SCATTERING STUDY OF THE SI(111) - AS-1X1 SURFACE
    HEADRICK, RL
    GRAHAM, WR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 637 - 638
  • [4] STRUCTURE AND CONCENTRATION ANALYSIS OF CU/SI(111) AT ROOM-TEMPERATURE WITH MEDIUM-ENERGY ION-SCATTERING
    YASUE, T
    PARK, C
    KOSHIKAWA, T
    KIDO, Y
    APPLIED SURFACE SCIENCE, 1993, 70-1 : 428 - 432
  • [5] Medium-energy ion-scattering study of the temperature dependence of the structure of Cu(111)
    Chae, KH
    Lu, HC
    Gustafsson, T
    PHYSICAL REVIEW B, 1996, 54 (19): : 14082 - 14086
  • [6] GE ISLAND FORMATION ON SI(111) IN SOLID-PHASE EPITAXY STUDIED BY MEDIUM-ENERGY ION-SCATTERING
    SUMITOMO, K
    NISHIOKA, T
    OGINO, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 387 - 389
  • [7] ELASTIC RECOIL DETECTION FOR MEDIUM-ENERGY ION-SCATTERING
    COPEL, M
    TROMP, RM
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1993, 64 (11): : 3147 - 3152
  • [8] INTERFACE STRUCTURE OF GE/SI(111) DURING SOLID-PHASE EPITAXY STUDIED BY MEDIUM-ENERGY ION-SCATTERING
    SUMITOMO, K
    NISHIOKA, T
    SHIMIZU, N
    SHINODA, Y
    OGINO, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (02): : 289 - 294
  • [9] STRUCTURE DETERMINATION OF THE COSI2(111) SURFACE USING MEDIUM-ENERGY ION-SCATTERING
    VRIJMOETH, J
    SCHINS, AG
    VANDERVEEN, JF
    PHYSICAL REVIEW B, 1989, 40 (05): : 3121 - 3128
  • [10] MONOLAYER RESOLUTION IN MEDIUM-ENERGY ION-SCATTERING EXPERIMENTS ON THE NISI2(111) SURFACE
    VRIJMOETH, J
    ZAGWIJN, PM
    FRENKEN, JWM
    VANDERVEEN, JF
    PHYSICAL REVIEW LETTERS, 1991, 67 (09) : 1134 - 1137
12345