Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films

被引：0
|
作者：
Park, Jong Cheon [1 ]
Cho, Hyun [2 ]
机构：
[1] Pusan Natl Univ, Dept Nano Fus Technol, Gyeongnam 627706, South Korea
[2] Pusan Natl Univ, Dept Nanomechatron Engn, Gyeongnam 627706, South Korea
来源：
JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY | 2011年 / 21卷 / 04期
关键词：
Etch selectivity; SnO2; ZnO; Mask material; ICP etching; Nano gas sensors;
D O I：
10.6111/JKCGCT.2011.21.4.164
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Etch selectivities of mask materials to ZnO and SnO2 films were studied in BCl3/Ar and CF4/Ar inductively coupled plasmas for fabrication of nanostructure-based gas sensing layer with high aspect ratios. In 25BCl(3)/10Ar ICP discharges, selectivities of 5.1 similar to 6.1 were obtained for ZnO over Ni while no practical selectivity was obtained for ZnO over Al. High selectivities of 7 similar to 17 for ZnO over Ni were produced in 25CF(4)/10Ar mixtures. SnO2 showed much higher etch rates than Ni and a maximum selectivity of 67 was observed for SnO2 over Ni.
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收藏
页码：164 / 168
页数：5
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