EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF INDIUM ARSENIDE

被引：24

作者：

DIXON, JR

ENRIGHT, DP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1959年 / 30卷 / 05期

关键词：

D O I：

10.1063/1.1735227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：753 / 759

页数：7

共 50 条

[31] PROPERTIES OF INDIUM ARSENIDE INFRARED FILTERS
GISIN, MA
ZAGIKA, IS
MUSTAEV, RM
SAKHOVSKAYA, LV
[J]. SOVIET JOURNAL OF OPTICAL TECHNOLOGY, 1978, 45 (01): : 29 - 31
[32] ELASTIC PROPERTIES OF INDIUM-ARSENIDE
BURENKOV, YA
DAVYDOV, SY
NIKANOROV, SP
[J]. FIZIKA TVERDOGO TELA, 1975, 17 (07): : 2183 - 2186
[33] Optical Properties of Indium Arsenide (InAs)
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[J]. JOURNAL OF ADVANCED PHYSICS, 2013, 2 (03) : 170 - 174
[34] THE EFFECT OF ORIENTATION ON THE ELECTRICAL PROPERTIES OF EPITAXIAL GALLIUM ARSENIDE
WILLIAMS, FV
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 886 - 888
[35] INFLUENCE OF INDIUM ON THE ELECTRICAL-PROPERTIES OF GALLIUM-ARSENIDE SINGLE-CRYSTALS
SOLOVEVA, EV
MILVIDSKII, MG
OSVENSKII, VB
BOLSHEVA, YN
GRIGOREV, YA
TSYGANOV, VP
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (03): : 366 - 367
[36] OSCILLATIONS OF PHOTOMAGNETIC EFFECT IN INDIUM ARSENIDE
KIKOIN, IK
LAZAREV, SD
[J]. JETP LETTERS-USSR, 1967, 5 (11): : 321 - &
[37] ANOMALOUS HALL EFFECT IN INDIUM ARSENIDE
VORONKOV, VV
SOLOVEVA, EV
IGLITSYN, MI
PIVOVARO.MN
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (12): : 1499 - &
[38] EFFECT OF DISLOCATIONS ON ELECTRICAL PROPERTIES OF INDIUM ANTIMONIDE
BAITINGER, U
SCHNEPF, D
ARNDT, J
[J]. JOURNAL DE PHYSIQUE, 1969, 30 (01): : 87 - +
[39] EFFECT OF PRESSURE ON THE ELECTRICAL PROPERTIES OF INDIUM ANTIMONIDE
LONG, D
[J]. PHYSICAL REVIEW, 1955, 99 (02): : 388 - 390
[40] EFFECT OF HEAT TREATMENT ON THE ELECTRICAL PROPERTIES OF A MANGANESE FERRITE CRYSTAL
ZAVETA, K
SVIRINA, E
MALIKOVA, O
[J]. SOVIET PHYSICS-SOLID STATE, 1963, 4 (12): : 2628 - 2629

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