EXCITED-STATES OF F-CENTERS IN OXIDES

被引：0
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作者：
HENDERSON, B
OCONNELL, DC
机构：
来源：
SEMICONDUCTORS AND INSULATORS | 1978年 / 3卷 / 04期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：299 / 327
页数：29
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