PREPARATION AND PROPERTIES OF EVAPORATED CDTE AND ALL THIN-FILM CDTE CDS SOLAR-CELLS

被引：2
|
作者：
NASEEM, S
机构：
[1] Centre for Solid State Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore
来源：
CHINESE PHYSICS LETTERS | 1991年 / 8卷 / 05期
关键词：
D O I：
10.1088/0256-307X/8/5/011
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Cadmium telluride thin films were prepared by vacuum evaporation of CdTe powder in an attempt to fabricate all thin film solar cells of the type CdTe/CdS. Characterization of CdTe has shown it to have a band gap of 1.522 eV and a resistivity of 22-OMEGA-cm. As prepared, solar cells exhibited low values of output parameters. Given quantity of copper was then deposited on top of the CdTe/CdS solar cells and the whole system was annealed at 350-degrees-C. This copper doping changed the output parameters favorably with a maximum efficiency of 1.9%.
引用
收藏
页码：255 / 258
页数：4
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