N-TYPE DOPING OF HIGHLY TETRAHEDRAL DIAMOND-LIKE AMORPHOUS-CARBON

被引：121
|
作者：
VEERASAMY, VS [1 ]
AMARATUNGA, GAJ [1 ]
DAVIS, CA [1 ]
TIMBS, AE [1 ]
MILNE, WI [1 ]
MCKENZIE, DR [1 ]
机构：
[1] UNIV SYDNEY,SCH PHYS,SYDNEY,NSW 2006,AUSTRALIA
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1993年 / 5卷 / 13期
关键词：
D O I：
10.1088/0953-8984/5/13/004
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The ability to control the electrical resistivity of semiconducting tetrahedral amorphous carbon (ta-C) films is reported. Phosphorus is incorporated during film growth from a plasma formed with a cathodic vacuum arc by using a phosphorus-containing carbon cathode. By changing the P content in the cathode from 0-1% mass the room temperature resistivity of the films can be changed from 10(7) OMEGA cm to 5 OMEGA cm. Electron energy-loss spectroscopy shows that incorporation of P does not change the amorphous tetrahedral nature of the carbon films deposited by the vacuum arc method.
引用
收藏
页码：L169 / L174
页数：6
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