DISLOCATION ENGINEERING IN ADVANCED III-V DEVICE STRUCTURES

被引:0
|
作者
KIGHTLEY, P
TAYLOR, RI
MOSELEY, AJ
AUGUSTUS, PD
MARSHALL, AC
GRIFFITHS, RJM
机构
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:187 / 192
页数:6
相关论文
共 50 条
  • [41] DIELECTRIC LAYERS FOR DEVICE APPLICATIONS ON THE III-V COMPOUNDS
    LILE, DL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : C348 - C349
  • [42] Analysis of III-V Superlattice nBn Device Characteristics
    Rhiger, David R.
    Smith, Edward P.
    Kolasa, Borys P.
    Kim, Jin K.
    Klem, John F.
    Hawkins, Samuel D.
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (09) : 4646 - 4653
  • [43] Tunnel junctions in a III-V nanowire by surface engineering
    Nadar, Salman
    Rolland, Chloe
    Lampin, Jean-Francois
    Wallart, Xavier
    Caroff, Philippe
    Leturcq, Renaud
    NANO RESEARCH, 2015, 8 (03) : 980 - 989
  • [44] Ge/III-V Channel Engineering for future CMOS
    Takagi, S.
    Sugiyama, M.
    Yasuda, T.
    Takenaka, M.
    GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, 2009, 19 (05): : 9 - +
  • [45] III-V/Ge Channel Engineering for Future CMOS
    Wistey, M. A.
    Singisetti, U.
    Burek, G. J.
    Kim, E.
    Thibeault, B. J.
    Nelson, A.
    Cagnon, J.
    Lee, Y. -J.
    Bank, S. R.
    Stemmer, S.
    McIntyre, P. C.
    Gossard, A. C.
    Rodwel, M. J. W.
    GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, 2009, 19 (05): : 361 - +
  • [46] ZnO gap engineering by doping with III-V compounds
    Andriotis, A. N.
    Menon, M.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (03)
  • [47] Engineering the Infrared Optical Response of Plasmonic Structures with ∈-Near-Zero III-V Semiconductors
    Fehlen, Pierre
    Guise, Julien
    Thomas, Guillaume
    Gonzalez-Posada, Fernando
    Loren, Patricia
    Cerutti, Laurent
    Rodriguez, Jean-Baptiste
    Spitzer, Denis
    Taliercio, Thierry
    ADVANCED OPTICAL MATERIALS, 2024, 12 (04)
  • [48] ADVANCED METALLIZATION FOR III-V SEMICONDUCTOR-DEVICES
    APPELBAUM, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (04) : C195 - C195
  • [49] Ferromagnet (MnAs)/III-V semiconductor hybrid structures
    Tanaka, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (04) : 327 - 341
  • [50] CATHODOLUMINESCENCE STUDY OF DEFECTS IN III-V SUBSTRATES AND STRUCTURES
    COCITO, M
    FRANZOSI, P
    SALVIATI, G
    TAIARIOL, F
    SCANNING ELECTRON MICROSCOPY, 1986, 1986 : 1299 - 1310