Formation and Conductance of Cd and Ti Single-Atom Contacts at Room Temperature

被引:4
|
作者
Horiuchi, Toshiki [1 ]
Takahashi, Atsushi [1 ]
Kurokawa, Shu [1 ]
Sakai, Akira [1 ]
机构
[1] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
关键词
Single-atom contacts; Conductance; HCP metals; Cd; Ti;
D O I
10.1380/ejssnt.2014.1
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Break junctions of some HCP metals are known to yield single -atom contacts (SACs) frequently at 4 K but rarely at room temperature (RT). In this work, we show that SACs of Cd and Ti can be produced at RT not by opening their junctions but by closing them. For both Cd and Ti, the conductance histogram measured at junction closing reveals a clear SAC peak whereas the SAC peak appears marginal in the histogram obtained at junction opening. Because SACs are formed through necking deformations in the junction opening, while not in the junction closing, our observations suggest that the rare SAC formation reported for some HCP break junctions at RT would be due to necking deformations. The observed histograms also determine the hitherto unknown SAC conductance of Cd and Ti as 0.7G(0) and 0.8G(0), respectively.
引用
收藏
页码:1 / 5
页数:5
相关论文
共 50 条
  • [22] Quantization effects in the conductance of metallic contacts at room temperature
    Muller, CJ
    Krans, JM
    Todorov, TN
    Reed, MA
    PHYSICAL REVIEW B, 1996, 53 (03): : 1022 - 1025
  • [23] Amorphized Defective Fullerene with a Single-Atom Platinum for Room-Temperature Hydrogen Storage
    Lee, Heebin
    Park, Dong Gyu
    Park, Joonho
    Kim, Yong-Hoon
    Kang, Jeung Ku
    ADVANCED ENERGY MATERIALS, 2023, 13 (20)
  • [24] GeVn complexes for silicon-based room-temperature single-atom nanoelectronics
    Simona Achilli
    Nicola Manini
    Giovanni Onida
    Takahiro Shinada
    Takashi Tanii
    Enrico Prati
    Scientific Reports, 8
  • [25] Scanning tunneling microscopic investigations into the conductance of single-atom junctions
    Kroger, J.
    Sperl, A.
    Néel, N.
    Berndt, R.
    Journal of Scanning Probe Microscopy, 2009, 4 (02): : 49 - 65
  • [26] Channel saturation and conductance quantization in single-atom gold constrictions
    Armstrong, Jason N.
    Schaub, R. M.
    Hua, Susan Z.
    Chopra, Harsh Deep
    PHYSICAL REVIEW B, 2010, 82 (19)
  • [27] Direct observation of conductance fluctuations of a single-atom tunneling contact
    Sperl, A.
    Kroeger, J.
    Berndt, R.
    PHYSICAL REVIEW B, 2010, 81 (03)
  • [28] Conduction channels at finite bias in single-atom gold contacts
    Brandbyge, M
    Kobayashi, N
    Tsukada, M
    PHYSICAL REVIEW B, 1999, 60 (24) : 17064 - 17070
  • [29] Conductance fingerprints of noncollinear magnetic states in single-atom contacts: A first-principles Wannier-functions study
    Hardrat, Bjoern
    Freimuth, Frank
    Heinze, Stefan
    Mokrousov, Yuriy
    PHYSICAL REVIEW B, 2012, 86 (16):
  • [30] G;eVn complexes for silicon-based room-temperature single-atom nanoelectronics
    Achilli, Simona
    Manini, Nicola
    Onida, Giovanni
    Shinada, Takahiro
    Tanii, Takashi
    Prati, Enrico
    SCIENTIFIC REPORTS, 2018, 8