TEMPORAL RESPONSE OF PHOTODIODES WITH GAAS/ALXGA1-XAS (0.1-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.3) MULTIQUANTUM WELL ABSORPTION REGIONS

被引：4

作者：

GOSWAMI, S

DAVIS, L

BHATTACHARYA, PK

机构：

[1] Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 10期

关键词：

D O I：

10.1063/1.352357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured and analyzed the temporal response characteristics of high-speed photodiodes having GaAs/AlxGa1-xAs (0.1 less-than-or-equal-to x less-than-or-equal-to 0.3) multiquantum well absorption/transit regions. It is seen that the response time of devices with Al0.1Ga0.9As barriers is fairly insensitive to the applied reverse bias and a 30-mum-diam mesa-etched device exhibits a 30 ps response time. The response time of devices with barriers having x > 0.1 is sensitive to the applied bias, which changes the mode of carrier escape from the wells for collections.

引用

页码：4888 / 4892

页数：5

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