ELECTRON-TRANSPORT AND EMISSION CHARACTERISTICS OF NEGATIVE ELECTRON AFFINITY ALXGA1-XAS ALLOYS (O LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.3)

被引：27

作者：

MARTINELLI, R ^{[1
]}

ETTENBERG, M ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 09期

关键词：

D O I：

10.1063/1.1663882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3896 / 3898

页数：3

共 50 条

[1] PROPERTIES AND APPLICATIONS OF ALXGA1-XAS (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1) GROWN AT LOW-TEMPERATURES
CHU, TY
DODABALAPUR, A
SRINIVASAN, A
NEIKIRK, DP
STREETMAN, BG
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 26 - 29
[2] AN ELECTRON-DIFFRACTION STUDY OF THE CDXINYA1ZS4 (0.9 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1,1 LESS-THAN-OR-EQUAL-TO Y LESS-THAN-OR-EQUAL-TO 1.3, 0.7 LESS-THAN-OR-EQUAL-TO Z LESS-THAN-OR-EQUAL-TO 1) CRYSTAL-STRUCTURE
ABDULLAYEV, AG
KYAZUMOV, MG
[J]. THIN SOLID FILMS, 1990, 190 (02) : 303 - 307
[3] OPTICAL-PROPERTIES OF MANGANESE IN ALXGA1-XAS (O LESS-THAN-OR-EQUAL-TO X LESS-THAN 0.3) SOLID-SOLUTIONS
OKTYABRSKII, SR
BESPALOV, VA
ZHURKIN, BG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 475 - 479
[4] TEMPERATURE STABILITY OF ALXGA1-XAS (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1) THERMAL OXIDE MASKS FOR SELECTIVE-AREA EPITAXY
JONES, SH
LAU, KM
POUCH, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) : 922 - 925
[5] MAIN ELECTRON TRAPS IN IN1-XGAXP (0.12 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.96)
MATSUMOTO, T
KATO, T
TAKIGUCHI, M
ISHIDA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (03): : 410 - 417
[6] HIGH-ENERGY ALXGA1-XAS (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.1) QUANTUM-WELL HETEROSTRUCTURE LASER OPERATION
CAMRAS, MD
HOLONYAK, N
HESS, K
COLEMAN, JJ
BURNHAM, RD
SCIFRES, DR
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 317 - 319
[7] CORRELATION OF PHOTOLUMINESCENCE AND DEEP TRAPPING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS(0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.40)
BHATTACHARYA, PK
SUBRAMANIAN, S
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3664 - 3668
[8] VARIATION OF BACKGROUND IMPURITIES IN ALXGA1-XAS (0.3 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.4) WITH GROWTH TEMPERATURE - IMPLICATIONS FOR DEVICE LEAKAGE CURRENT AND SURFACE HETEROINTERFACE ROUGHNESS
CHAND, N
HARRIS, TD
CHU, SNG
BECKER, EE
SERGENT, AM
SCHNOES, M
LANG, DV
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 20 - 25
[9] DETERMINATION OF THE GERMANIUM ACCEPTOR IONIZATION-ENERGY OF ALXGA1-XAS (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.40) BY HALL-EFFECT AND LUMINESCENCE
OELGART, G
LIPPOLD, B
HEILMANN, R
NEUMANN, H
JACOBS, B
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 115 (01): : 257 - 266
[10] PHASE-RELATIONS AND MAGNETIC-PROPERTIES OF MM[CO1-XCUX]5 0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1 AND MM[CO1-XFEX]5 0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.3 ALLOYS
VELU, EMT
SUBBARAO, EC
BONDA, NR
GUPTA, KP
LAHA, S
MAJUMDAR, AK
SANKAR, TAP
PANDIAN, S
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1980, 16 (05) : 997 - 999

← 1 2 3 4 5 →