METALORGANIC VAPOR-PHASE EPITAXY FOR MODULATION DOPED III-V HETEROSTRUCTURES

被引：0
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作者：
ANDRE, JP
BRIERE, A
AUGARDE, E
AGUILA, T
WOLNY, M
PATILLON, JN
机构：
来源：
ACTA ELECTRONICA | 1988年 / 28卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：7 / 14
页数：8
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