METALORGANIC VAPOR-PHASE EPITAXY FOR MODULATION DOPED III-V HETEROSTRUCTURES

被引：0
|
作者：
ANDRE, JP
BRIERE, A
AUGARDE, E
AGUILA, T
WOLNY, M
PATILLON, JN
机构：
来源：
ACTA ELECTRONICA | 1988年 / 28卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：7 / 14
页数：8
相关论文
共 50 条
  • [1] THERMODYNAMIC ANALYSIS OF METALORGANIC VAPOR-PHASE EPITAXY OF III-V ALLOY SEMICONDUCTORS
    SEKI, H
    KOUKITU, A
    JOURNAL OF CRYSTAL GROWTH, 1986, 74 (01) : 172 - 180
  • [2] ALTERNATIVE PRECURSORS FOR THE GROWTH OF (ALGA)AS/GAAS MODULATION-DOPED HETEROSTRUCTURES BY METALORGANIC VAPOR-PHASE EPITAXY
    STOLZ, W
    PROTZMANN, H
    GOBEL, EO
    HOSTALEK, M
    POHL, L
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 155 - 160
  • [3] Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine
    Chen, GY
    Cheng, D
    Hicks, RF
    Noori, AM
    Hayashi, SL
    Goorsky, MS
    Kanjolia, R
    Odedra, R
    JOURNAL OF CRYSTAL GROWTH, 2004, 270 (3-4) : 322 - 328
  • [4] KINETIC ASPECTS IN VAPOR-PHASE EPITAXY OF III-V COMPOUNDS
    SHAW, DW
    JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 130 - 141
  • [5] Predicting the Conditions for the Vapor-Phase Epitaxy of the III-V Compounds
    Vigdorovich, E. N.
    SEMICONDUCTORS, 2019, 53 (15) : 2007 - 2011
  • [6] TM3+-RELATED EMISSIONS IN III-V SEMICONDUCTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    PRESSEL, K
    WEBER, J
    HILLER, C
    OTTENWALDER, D
    KURNER, W
    DORNEN, A
    SCHOLZ, F
    LOCKE, K
    WIEDMANN, D
    CORDEDDU, F
    APPLIED PHYSICS LETTERS, 1992, 61 (05) : 560 - 562
  • [7] VAPOR-PHASE EPITAXY (VPE) OF III-V COMPOUND OPTOELECTRONIC DEVICES
    OLSEN, GH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) : C244 - C244
  • [8] CRYSTALLOGRAPHIC ORIENTATION DEPENDENCE OF IMPURITY INCORPORATION INTO III-V COMPOUND SEMICONDUCTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    KONDO, M
    ANAYAMA, C
    OKADA, N
    SEKIGUCHI, H
    DOMEN, K
    TANAHASHI, T
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (02) : 914 - 927
  • [9] Perspectives on the Development of Metalorganic Vapor Phase Epitaxy for III-V Optoelectronic Devices
    Wang, Christine A.
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2022, 58 (04)
  • [10] THE ROLE OF THE V/III RATIO IN THE GROWTH AND STRUCTURAL-PROPERTIES OF METALORGANIC VAPOR-PHASE EPITAXY GAAS/GE HETEROSTRUCTURES
    PELOSI, C
    ATTOLINI, G
    BOCCHI, C
    FRANZOSI, P
    FRIGERI, C
    BERTI, M
    DRIGO, AV
    ROMANATO, F
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1723 - 1730
12345