HREM STUDY OF GAAS-LAYERS GROWN ON GE BY THE CLOSE-SPACED VAPOR TRANSPORT TECHNIQUE

被引：0
|
作者：
GUELTON, N [1 ]
FEUILLET, G [1 ]
SAINTJACQUES, RG [1 ]
DODELET, JP [1 ]
机构：
[1] CEN,DRF,SPH,PSC,F-38041 GRENOBLE,FRANCE
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 | 1993年 / 134期
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of operating conditions on the microstructure of GaAs grown on Ge substrates by close-spaced vapor transport have been investigated by conventional and high resolution electron microscopy. High quality single domain layers were obtained by a pre-growth thermal treatment of Ge vicinal substrates in H-2 prior to growth.
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页码：365 / 368
页数：4
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