INFLUENCE OF WAVEGUIDE PROPERTIES OF A P-N JUNCTION ON COHERENT EMISSION OF GALLIUM ARSENIDE LASER DIODES

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作者：
ALLAKHVERDYAN, RG
ORAEVSKI.AN
SUCHKOV, AF
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 4卷 / 02期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：277 / +
页数：1
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