HYDROGEN DIFFUSION AND RELATED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON CARBIDE

被引：15

作者：

DEMICHELIS, F

PIRRI, CF

TRESSO, E

RIGATO, V

DELLAMEA, G

机构：

[1] POLITECN TORINO, CONSORZIO I UNITA, I-10129 TURIN, ITALY

[2] CONSORZIO INFM UNITA PADOVA, I-35131 PADUA, ITALY

[3] UNIV TRENTO, DIPARTIMENTO INGN MAT, I-38050 MESIANO, ITALY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 128卷 / 02期

关键词：

D O I：

10.1016/0022-3093(91)90505-Z

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Films of a-SiC:H have been deposited by glow-discharge and annealed at differing temperatures in steps of 50-degrees-C in the range 200-450-degrees-C. Measurements of elemental composition by means of nuclear techniques, of infrared, photothermal deflection, optical and ESR spectroscopies, of dark and photoconductivity were performed for every annealing temperature. The hydrogen content (free and bonded to silicon and/or carbon), the spin density, the optical gap and the Urbach energy were deduced. By means of differential scanning calorimetry, the annealing behaviour has been interpreted. For annealing temperature lower than 250-degrees-C, an irreversible rearrangement of the network has been observed, while over 350-degrees-C hydrogen effusion occurs first and then crystallization.

引用

页码：133 / 138

页数：6

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