BREAKDOWN VOLTAGE OF HIGH-VOLTAGE BIPOLAR-TRANSISTORS

被引：3
|
作者：
HASSAN, MMS
CHOWDHURY, GR
ALAM, MZ
机构：
[1] Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka
来源：
SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 10期
关键词：
D O I：
10.1016/0038-1101(91)90107-A
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An empirical expression for open-base bulk breakdown voltage of an epitaxial n+pn-n+ bipolar transistor as a function of collector doping density and common-emitter current gain is useful in the design of the collector region of the transistor. In this paper, analytic expressions for optimal collector doping density and epitaxial layer thickness of high-voltage transistors with a lightly-doped collector are obtained as a function of breakdown voltage subject to a minimum collector resistance. A relation between open-base and open-emitter bulk breakdown voltages is also established in this paper.
引用
收藏
页码：1109 / 1111
页数：3
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