RF REACTIVELY SPUTTERED SUPERCONDUCTING NBNX FILMS

被引：14

作者：

KESKAR, KS

YAMASHITA, T

ONODERA, Y

GOTO, Y

ASO, T

机构：

[1] TOHOKU UNIV, RES INST ELECT COMM, SENDAI, JAPAN

[2] TOHOKU UNIV, FAC ENGN, SENDAI, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 07期

关键词：

D O I：

10.1063/1.1663730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3102 / 3105

页数：4

共 50 条

[1] RF SUPERCONDUCTING PROPERTIES OF REACTIVELY SPUTTERED NBN
ISAGAWA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 921 - 927
[2] PROPERTIES OF REACTIVELY SPUTTERED SUPERCONDUCTING FILMS
GAVALER, JR
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (01) : 623 - 624
[3] EFFECTS OF DEPOSITION PARAMETERS ON THE PROPERTIES OF SUPERCONDUCTING RF REACTIVELY SPUTTERED NBN FILMS
WOLF, SA
SINGER, IL
CUKAUSKAS, EJ
FRANCAVILLA, TL
SKELTON, EF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 411 - 414
[4] AUGER ANALYSIS OF SUPERCONDUCTING NBN REACTIVELY SPUTTERED FILMS
SINGER, IL
WOLF, SA
LOWREY, WH
MURDAY, JS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 625 - 625
[5] STRUCTURE AND COMPOSITION OF RF REACTIVELY SPUTTERED MOSX FILMS
REICHELT, K
MAIR, G
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1245 - 1247
[6] SUPERCONDUCTING PROPERTIES OF REACTIVELY SPUTTERED NBCN THIN-FILMS
FRANCAVILLA, TL
WOLF, SA
SKELTON, EF
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (01) : 569 - 572
[7] RF REACTIVELY SPUTTERED ALUMINUM NITRIDE THIN-FILMS
KUMAR, N
POURREZAEI, K
SINGH, B
DEMARIA, RJ
[J]. IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1986, 33 (06) : 823 - 823
[8] ELECTROCHEMICHROMISM OF RF REACTIVELY SPUTTERED TUNGSTEN-OXIDE FILMS
KANEKO, H
MIYAKE, K
TERAMOTO, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4416 - 4421
[9] SUPERCONDUCTIVITY TRANSITION TEMPERATURES OF RF REACTIVELY SPUTTERED NBN FILMS
BUTTIG, K
LIEMERSD.H
KINDER, H
REICHELT, K
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) : 5069 - 5071
[10] FABRICATION OF RF REACTIVELY SPUTTERED TiN THIN FILMS.
Kumar, N.
Pourrezaei, K.
Fissel, M.
Begley, T.
Lee, B.
Douglas, E.C.
[J]. Semiconductor International, 1987, 10 (05) : 100 - 104

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