ULTRAFAST HOT-ELECTRON DYNAMICS IN SILICON

被引：11

作者：

GOLDMAN, JR ^{[1
]}

PRYBYLA, JA ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 05期

关键词：

D O I：

10.1088/0268-1242/9/5S/078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultrafast (150 fs) time-resolved photoelectron spectroscopy is used to directly observe the energy relaxation of optically excited electrons in silicon. Conduction band electrons fit a thermal distribution by 120 fs pump-probe delay. The initial cooling rate of the excited distribution is found to be extremely fast, followed by an electron-phonon thermalization time of approximately 1 ps, and an overall much slower cooling rate as the electrons lose energy. Here, we also report a new effect in two-photon photoemission unique to ultrashort laser pulses. Our model and results demonstrate this effect to be a sensitive new monitor of electron dynamics.

引用

页码：694 / 696

页数：3

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