PHOTOELECTROCHEMICAL ETCHING OF 6H-SIC

被引：85

作者：

SHOR, JS

KURTZ, AD

机构：

[1] Kulite Semiconductor Products, Leonia

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 03期

关键词：

D O I：

10.1149/1.2054810

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new photoelectrochemical etching process is described for n-type 6H-SiC, while dark electrochemistry has been used to pattern p-type material. In this two-step etching process, the SiC is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an HF dip. Etch rates as high as 4000 angstrom/min for n-SiC and 2.2 mum/min for p-SiC have been obtained during the anodization, resulting in near mirror-like etched surfaces.

引用

页码：778 / 781

页数：4

共 50 条

[21] Step control of vicinal 6H-SiC(0001) surface by H2 etching
Nakajima, A.
Yokoya, H.
Furukawa, Y.
Yonezu, H.
1600, American Institute of Physics Inc. (97):
[22] Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H2O2 solution as electrolytes
Song, JG
Shin, MW
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 957 - 960
[23] The role of excess silicon and in situ etching on 4H-SiC and 6H-SiC epitaxial layer morphology
Burk, AA
Rowland, LB
JOURNAL OF CRYSTAL GROWTH, 1996, 167 (3-4) : 586 - 595
[24] Preferential carbon etching by hydrogen inside hexagonal voids of 6H-SiC(0001)
Sander, D
Wulfhekel, W
Hanbücken, M
Nitsche, S
Palmari, JP
Dulot, F
d'Avitaya, FA
Leycuras, A
APPLIED PHYSICS LETTERS, 2002, 81 (19) : 3570 - 3572
[25] Electrochemical etching of n-type 6H-SiC without UV illumination
Chang, WH
Schellin, B
Obermeier, E
Huang, YC
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2006, 15 (03) : 548 - 552
[26] Anisotropic surface etching of 6H-SiC(0001) induced by reaction with oxygen molecules
Kubo, O
Kobayashi, T
Yamaoka, N
Itou, S
Katayama, M
Oura, K
Ohkado, H
APPLIED PHYSICS LETTERS, 2002, 80 (23) : 4330 - 4332
[27] The monolithic integration of 6H-SiC electronics with 6H-SiC MEMS for harsh environment applications
Hailu, E
Atwell, AR
Duster, JS
Li, C
Balseanu, M
Kornegay, KT
NANOTECH 2003, VOL 1, 2003, : 270 - 271
[28] SCANDIUM ACCEPTOR IN 6H-SIC
BALLANDOVICH, VS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (02): : 174 - 178
[29] Electrochemistry of anodic etching of 4H and 6H-SiC in fluoride solution of pH 3
van Dorp, D. H.
Sattler, J. J. H. B.
den Otter, J. H.
Kelly, J. J.
ELECTROCHIMICA ACTA, 2009, 54 (26) : 6269 - 6275
[30] Ion implantation in 6H-SiC
Rao, MV
Nordstrom, D
Gardner, JA
Edwards, A
Roth, EG
Kelner, G
Ridgway, M
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 655 - 659

← 1 2 3 4 5 →