PHOTOELECTROCHEMICAL ETCHING OF 6H-SIC

被引：85

作者：

SHOR, JS

KURTZ, AD

机构：

[1] Kulite Semiconductor Products, Leonia

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 03期

关键词：

D O I：

10.1149/1.2054810

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new photoelectrochemical etching process is described for n-type 6H-SiC, while dark electrochemistry has been used to pattern p-type material. In this two-step etching process, the SiC is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an HF dip. Etch rates as high as 4000 angstrom/min for n-SiC and 2.2 mum/min for p-SiC have been obtained during the anodization, resulting in near mirror-like etched surfaces.

引用

页码：778 / 781

页数：4

共 50 条

[1] Study on the photoelectrochemical etching process of semiconducting 6H-SiC wafer
Shin, MW
Song, JG
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 95 (03): : 191 - 194
[2] Photoelectrochemical characterization of 6H-SiC
van de Lagemaat, J
Vanmaekelbergh, D
Kelly, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 6089 - 6095
[3] Thermal etching of 6H-SiC substrate surface
Nishiguchi, Taro
Ohshima, Satoru
Nishino, Shigehiro
[J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (4 A): : 1533 - 1537
[4] Microtrenching geometry of 6H-SiC plasma etching
Ru, Han
Yin-Tang, Yang
Xiao-Ya, Fan
[J]. VACUUM, 2009, 84 (03) : 400 - 404
[5] Novel Method for Electroless Etching of 6H-SiC
Karolyhazy, Gyula
Beke, David
Zalka, Dora
Lenk, Sandor
Krafcsik, Olga
Kamaras, Katalin
Gali, Adam
[J]. NANOMATERIALS, 2020, 10 (03)
[6] Thermal etching of 6H-SiC substrate surface
Nishiguchi, T
Ohshima, S
Nishino, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4A): : 1533 - 1537
[7] Reactive ion etching of trenches in 6H-SiC
Kothandaraman, M
Alok, D
Baliga, BJ
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) : 875 - 878
[8] Hierarchical Porous Patterns of n-type 6H-SiC Crystals via Photoelectrochemical Etching
Lihuan Wang
Huihui Shao
Xiaobo Hu
Xiangang Xu
[J]. Journal of Materials Science & Technology, 2013, 29 (07) : 655 - 661
[9] Photoluminescence of 6H-SiC nanostructures fabricated by electrochemical etching
Botsoa, J.
Bluet, J. M.
Lysenko, V.
Marty, O.
Barbier, D.
Guillot, G.
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)
[10] Gaseous etching of 6H-SiC at relatively low temperatures
Xie, ZY
Wei, CH
Li, LY
Yu, QM
Edgar, JH
[J]. JOURNAL OF CRYSTAL GROWTH, 2000, 217 (1-2) : 115 - 124

← 1 2 3 4 5 →