Growth Kinetics and Electronic Properties of Passive Film of Nickel in Borate Buffer Solution

被引：1

作者：

Kim, Younkyoo ^{[1
]}

机构：

[1] Hankuk Univ Foreign Studies, Dept Chem, Coll Nat Sci, Yongin 449791, South Korea

来源：

JOURNAL OF THE KOREAN CHEMICAL SOCIETY-DAEHAN HWAHAK HOE JEE | 2014年 / 58卷 / 01期

关键词：

Nickel; Corrosion; Passivation; p-Type semiconductor; Mott-Schottky;

D O I：

10.5012/jkcs.2014.58.1.9

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In a borate buffer solution, the growth kinetics and the electronic properties of passive film on nickel were investigated, using the potentiodynamic method, chronoamperometry, and single- or multi-frequency electrochemical impedance spectroscopy. The oxide film formed during the passivation process of nickel has showed the electronic properties of p-type semiconductor, which follow from the Mott-Schottky equation. It was found out that the passive film (Ni(OH)(2)) of Ni formed in the low electrode potential changes to NiO and NiO(OH) while the electrode potential increases.

引用

页码：9 / 16

页数：8

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