ANGULAR-DEPENDENCE OF THE MAGNETORESISTANCE OF TISI2 SINGLE-CRYSTALS

被引:1
|
作者
AFFRONTE, M
LABORDE, O
GOTTLIEB, U
THOMAS, O
MADAR, R
机构
[1] UNIV GRENOBLE 1,CTR RECH TRES BASSES TEMP,CNRS,F-38042 GRENOBLE 9,FRANCE
[2] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY
[3] CNRS,CHAMPS MAGNET INTENSES LAB,F-38042 GRENOBLE 9,FRANCE
[4] INST NATL POLYTECH GRENOBLE,ECOLE NATL SUPER PHYS GRENOBLE,MAT & GENIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE
关键词
D O I
10.1016/0169-4332(95)00102-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We measured the transverse magnetoresistance Delta rho/rho of good quality TiSi2 single crystals at low temperatures (4.2 less than or equal to T less than or equal to 112 K) in magnetic fields up to 7.8 Tesla, Single crystals were produced by a modified Czochralski pulling technique and they have low residual resistivity (typically rho(4.2 K) = 0.15 mu Omega . cm) and high residual resistance ratio (typically RRR > 50). The angular dependence of magnetoresistance shows either minima or maxima when the magnetic field is parallel to the principal crystallographic axes. At high fields (B > 1 T) we found that the magnetoresistance has a magnetic field dependence weaker than the B-2 law expected for compensated metals. At 7.8 T, the values of omega(c) tau obtained are of the order of unity, The Kohler scaling rule is observed within three orders of magnitude of the reduced parameter B/rho (where rho is the zero field resistivity measured between 4.2 and 112 K).
引用
收藏
页码:98 / 102
页数:5
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