CURRENT ACTIVITY IN CNRS-SOPHIA ANTIPOLIS REGARDING WIDE-GAP II-VI MATERIALS

被引：10
|
作者：
FAURIE, JP
BRUNET, P
MORHAIN, C
ONGARETTO, C
TOURNIE, E
机构：
[1] Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), CNRS-Sophia Antipolis, Valbonne
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1995年 / 187卷 / 02期
关键词：
D O I：
10.1002/pssb.2221870226
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Preliminary results about MBE growth and characterization of ZnSe-based alloys and multi-quantum wells (MQW) are presented. Undoped ZnSe and Zn1-xCdxSe compounds exhibiting structural and optical properties, comparable to the best results previously published, are grown. RHEED intensity oscillations are observed during ZnSe and Zn1-xCdxSe growth. Several Zn1-xCdxSe/ZnSe MQWs are grown. RHEED intensity analysis is used to accurately control the well thicknesses. The MQWs produce very intense and sharp photoluminescence peaks. The sharpness of interfaces is confirmed by X-ray analysis. Cl-doped ZnSe epilayers with doping levels at 77 K ranging from 6 x 10(15) to 6 x 10(18) cm(-3) are obtained.
引用
收藏
页码：457 / 466
页数：10
相关论文
共 50 条
  • [31] Bound excitons in wide-gap II-VI and nitride semiconductors.: Comparison of optical studies of shallow dopants in these materials
    Hoffmann, A
    Kutzer, V
    Göldner, A
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1998, 210 (02): : 327 - 335
  • [32] Dark exciton states and magneto-excitons in wide-gap II-VI quantum wells
    Puls, J
    Henneberger, F
    Rabe, M
    Siarkos, A
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 787 - 794
  • [33] OPTICALLY BISTABLE THIN-FILM DEVICES USING WIDE-GAP II-VI COMPOUNDS
    EICHLER, HJ
    GLAW, V
    KUMMROW, A
    PENSCHKE, V
    WAHI, A
    JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 695 - 698
  • [34] Exciton versus free-carrier lasing in wide-gap II-VI quantum wells
    Cingolani, R
    Coli, G
    Calcagnile, L
    Vanzetti, L
    Sorba, L
    Franciosi, A
    LaRocca, GC
    Campi, D
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 141 - 146
  • [35] DETAILED MECHANISMS OF ELECTRON TRANSITIONS RESPONSIBLE FOR THE EDGE LUMINESCENCE OF WIDE-GAP II-VI COMPOUNDS
    RIZAKHANOV, MA
    SHEINKMAN, MK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (10): : 1119 - 1123
  • [36] THIN EPITAXIAL-FILMS OF WIDE-GAP II-VI COMPOUNDS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY
    ROSSOW, U
    WERNINGHAUS, T
    ZHAN, DRT
    RICHTER, W
    HORN, K
    THIN SOLID FILMS, 1993, 233 (1-2) : 176 - 179
  • [37] Exciton localization in bulk and two-dimensional wide-gap II-VI solid solutions
    Permogorov, S
    Klochikhin, A
    Reznitsky, A
    JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 371 (1-2) : 48 - 52
  • [38] PREPARATION AND PROPERTIES OF SOLID-STATE SUBSTITUTION HETEROJUNCTIONS IN WIDE-GAP II-VI COMPOUNDS
    KOSYACHENKO, LA
    MAKHNIY, VP
    JOURNAL OF CRYSTAL GROWTH, 1991, 110 (03) : 523 - 527
  • [39] Excitons, Bi-excitons, and stimulated emission in wide-gap II-VI quantum wells
    Henneberger, F
    Puls, J
    Haupl, T
    Kreller, F
    Lowisch, M
    Nickolaus, H
    Schulzgen, A
    Wunsche, HJ
    Griesche, J
    Hoffmann, N
    Rabe, M
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IV, 1996, 2693 : 222 - 232
  • [40] BLUE-GREEN EMITTERS IN WIDE-GAP II-VI QUANTUM-CONFINED STRUCTURES
    NURMIKKO, AV
    GUNSHOR, RL
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 619 - 630
12345