DIELECTRIC THEORY OF IMPURITY BINDING ENERGIES .1. GROUP-V DONORS IN SI AND GE

被引：40

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作者：

PHILLIPS, JC

机构：

来源：

PHYSICAL REVIEW B | 1970年 / 1卷 / 04期

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D O I：

10.1103/PhysRevB.1.1540

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：1540 / &

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[2] EFFECT OF LOCAL RELAXATION ON THE BINDING-ENERGY OF GROUP-V DONORS IN SILICON
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[3] EQUILIBRIUM THERMOCHEMISTRY OF SOLID AND LIQUID ALLOYS OF GERMANIUM AND OF SILICON .1. THE SOLUBILITY OF GE AND SI IN ELEMENTS OF GROUP-III, GROUP-IV AND GROUP-V
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[4] Chemical trend of the formation energies of the group-III and group-V dopants in Si quantum dots
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[6] Pseudopotential studies of co-adsorption of group-V elements and Ge on Si(001) surfaces
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[7] GROUP-V BORANES .1. SYNTHESIS OF ARSABORANES FROM DECABORANE
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[8] Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge
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[9] Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge
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[10] DIELECTRIC THEORY OF IMPURITY BINDING ENERGIES .2. DONOR AND ISOELECTRONIC IMPURITIES IN GAP
PHILLIPS, JC
PHYSICAL REVIEW B, 1970, 1 (04): : 1545 - &

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