ELECTRONIC BAND-STRUCTURE OF MONOLAYER SB ON GAP(110)

被引:5
|
作者
WHITTLE, R
DUDZIK, E
MCGOVERN, IT
HEMPELMANN, A
NOWAK, C
ZAHN, DRT
CAFOLLA, A
BRAUN, W
机构
[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,W-1000 BERLIN 12,GERMANY
[2] UNIV WALES COLL CARDIFF,COLL CARDIFF,DEPT PHYS,CARDIFF CF1 3TH,WALES
[3] BESSY,W-1000 BERLIN 33,GERMANY
关键词
D O I
10.1016/0368-2048(94)80011-1
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
We have used angle resolved ultra violet photoelectron spectroscopy (ARUPS) with synchrotron radiation to map the two dimensional electronic bandstructure of monolayer Sb on GaP(110). The dispersion of the features in the valence band was followed along the four symmetry directions of the surface Brillouin zone using sets of spectra taken at several photon energies. Five bands originating from surface states were then identified and selection rules based on polarisation and emission geometry were used to probe the nature of these states. The experimental results are compared with recent tight-binding and pseudopotential calculations for Sb/GaP(110).
引用
收藏
页码:399 / 405
页数:7
相关论文
共 50 条
  • [1] ELECTRONIC BAND-STRUCTURE OF MONOLAYER BI ON GAP(110)
    WHITTLE, R
    MURPHY, A
    DUDZIK, E
    MCGOVERN, IT
    HEMPELMANN, A
    NOWAK, C
    ZAHN, DRT
    CAFOLLA, A
    BRAUN, W
    JOURNAL OF SYNCHROTRON RADIATION, 1995, 2 : 256 - 260
  • [2] PHOTOELECTRON BAND-STRUCTURE OF INP(110)-SB MONOLAYERS
    MCGOVERN, IT
    WHITTLE, R
    ZAHN, DRT
    MULLER, C
    NOWAK, C
    CAFOLLA, A
    BRAUN, W
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 : S367 - S372
  • [3] MONOLAYER GRAPHITE ON TAC(111) - ELECTRONIC BAND-STRUCTURE
    ITCHKAWITZ, BS
    LYMAN, PF
    OWNBY, GW
    ZEHNER, DM
    SURFACE SCIENCE, 1994, 318 (03) : 395 - 402
  • [4] ELECTRONIC BAND-STRUCTURE OF MONOLAYER THIN SEMICONDUCTOR SUPERLATTICES
    SRIVASTAVA, GP
    VACUUM, 1988, 38 (4-5) : 233 - 236
  • [5] UNOCCUPIED ELECTRONIC STATES IN THE BAND-STRUCTURE OF NIAL(110)
    CASTRO, GR
    DURR, H
    FISCHER, R
    FAUSTER, T
    PHYSICAL REVIEW B, 1992, 45 (20): : 11989 - 11992
  • [6] SURFACE ELECTRONIC-STRUCTURE OF MONOLAYER SB ON INP(110)
    WHITTLE, R
    MCGOVERN, IT
    ZAHN, DRT
    MULLER, C
    NOWAK, C
    CAFOLLA, A
    BRAUN, W
    APPLIED SURFACE SCIENCE, 1992, 56-8 : 218 - 223
  • [7] GEOMETRY AND ELECTRONIC BAND-STRUCTURE OF AN ORDERED MONOLAYER DEPOSITION OF BI ON III-V(110) SEMICONDUCTOR SURFACES
    UMERSKI, A
    SRIVASTAVA, GP
    PHYSICAL REVIEW B, 1995, 51 (04): : 2334 - 2346
  • [8] ELECTRONIC BAND-STRUCTURE IN THE FERRIMAGNETIC STATE OF MN2SB
    SUZUKI, M
    SHIRAI, M
    MOTIZUKI, K
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (01) : L33 - L36
  • [9] GEOMETRY AND ELECTRONIC BAND-STRUCTURE OF GAAS(110)-BI (1 ML)
    UMERSKI, A
    SRIVASTAVA, GP
    PHYSICAL REVIEW B, 1993, 48 (11): : 8450 - 8453
  • [10] A THEORETICAL-STUDY OF THE ELECTRONIC-STRUCTURE OF CLEAN GAP(110) AND SB ON GAP(110) SURFACES
    WHITTLE, R
    MCGOVERN, IT
    HUGHES, A
    SHEN, TH
    MATTHAI, CC
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (36) : 6555 - 6562