ELECTRONIC BAND-STRUCTURE OF MONOLAYER BI ON GAP(110)

被引：2

作者：

WHITTLE, R

MURPHY, A

DUDZIK, E

MCGOVERN, IT

HEMPELMANN, A

NOWAK, C

ZAHN, DRT

CAFOLLA, A

BRAUN, W

机构：

[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,W-1000 BERLIN 12,GERMANY

[2] TECH UNIV CHEMNITZ ZWICKAU,FACHBEREICH PHYS,D-09126 CHEMNITZ,GERMANY

[3] DUBLIN CITY UNIV,DEPT PHYS,DUBLIN 9,IRELAND

[4] BESSY,W-1000 BERLIN 33,GERMANY

来源：

JOURNAL OF SYNCHROTRON RADIATION | 1995年 / 2卷

关键词：

PHOTOELECTRON SPECTROSCOPY; ARUPS; SEMICONDUCTOR INTERLACES; BI ON GAP(110);

D O I：

10.1107/S0909049595009770

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The two-dimensional electronic band structure of monolayer Bi on GaP(110) has been mapped using angle-resolved UV photoelectron spectroscopy (ARUPS) with synchrotron radiation. Surface photovoltage effects are corrected for by simultaneous second-order core spectroscopy. From valence-band spectra along the four symmetry directions of the surface Brillouin zone at three photon energies it is possible to distinguish three states as surface related. The topmost band is found to be inside the fundamental band gap, at ca 0.75 eV above the bulk valence-band maximum. Comparison with other V/III-V(110) systems shows that this system is not significantly different, despite the relatively large size of the Bi atoms with respect to the GaP lattice; in a selective comparison with InP and GaAs it would appear that Bi-substrate anion bonding is a more important factor than strain.

引用

页码：256 / 260

页数：5

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